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1

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

Higashi, Yusuke, Takaishi, Riichiro, Kato, Koichi, Suzuki, Masamichi, Nakasaki, Yasushi, Tomita, Mitsuhiro, Mitani, Yuichiro, Matsumoto, Masuaki, Ogura, Shohei, Fukutani, Katsuyuki, Yamabe, Kikuo

Journal:

Microelectronics Reliability

Year:

2017

Language:

english

File:

PDF, 2.46 MB

english, 2017

2

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

Hirano, Izumi, Nakasaki, Yasushi, Fukatsu, Shigeto, Goto, Masakazu, Nagatomo, Koji, Inumiya, Seiji, Sekine, Katsuyuki, Mitani, Yuichiro, Yamabe, Kikuo

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

3

Structural Studies of High-Performance Low- k Dielectric Materials Improved by Electron-Beam Curing

Yoda, Takashi, Nakasaki, Yasushi, Hashimoto, Hideki, Fujita, Keiji, Miyajima, Hideshi, Shimada, Miyoko, Nakata, Rempei, Kaji, Naruhiko, Hayasaka, Nobuo

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 254 KB

english, 2005

4

[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics

Hirano, Izumi, Nakasaki, Yasushi, Fukatsu, Shigeto, Masada, Akiko, Mitani, Yuichiro, Goto, Masakazu, Nagatomo, Koji, Inumiya, Seiji, Sekine, Katsuyuki

Year:

2009

Language:

english

File:

PDF, 477 KB

english, 2009

5

Interface defect engineering for high-performance MOSFETs with novel carrier mobility model: Theory and experimental verification

Ishihara, Takamitsu, Nakasaki, Yasushi, Matsushita, Daisuke, Tatsumura, Kosuke, Kato, Koichi

Journal:

Year:

2020

File:

PDF, 7.57 MB

2020

6

Effects of CN ratio on thermophilic composting of garbage

Kiyohiko Nakasaki, Hideki Yaguchi, Yasushi Sasaki, Hiroshi Kubota

Journal:

Journal of Fermentation and Bioengineering

Year:

1992

Language:

english

File:

PDF, 286 KB

english, 1992

7

[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory

Yamaguchi, Marina, Fujii, Shosuke, Kamimuta, Yuuichi, Kabuyanagi, Shoichi, Ino, Tsunehiro, Nakasaki, Yasushi, Takaishi, Riichiro, Ichihara, Reika, Saitoh, Masumi

Year:

2018

Language:

english

File:

PDF, 839 KB

english, 2018

8

Effects of oxygen concentration on composting of garbage

Kiyohiko Nakasaki, Hideki Yaguchi, Yasushi Sasaki, Hiroshi Kubota

Journal:

Journal of Fermentation and Bioengineering

Year:

1990

Language:

english

File:

PDF, 253 KB

english, 1990

9

Effects Of pH Control On Composting Of Garbage

Kiyohiko Nakasaki, Hideki Yaguchi, Yasushi Sasaki, Hiroshi Kubota

Journal:

Waste Management & Research

Year:

1993

File:

PDF, 281 KB

1993

10

Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks

Hirano, Izumi, Yamaguchi, Takeshi, Nakasaki, Yasushi, Iijima, Ryosuke, Sekine, Katsuyuki, Takayanagi, Mariko, Eguchi, Kazuhiro, Mitani, Yuichiro

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.75 MB

english, 2012

11

on Si(100): Experiments and first-principles calculations

Kato, Koichi, Matsushita, Daisuke, Muraoka, Koichi, Nakasaki, Yasushi

Journal:

Physical Review B

Year:

2008

Language:

english

File:

PDF, 1.35 MB

english, 2008

12

Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO 2 interface

Kawai, Hiroki, Nakasaki, Yasushi, Kanemura, Takahisa, Ishihara, Takamitsu

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 4.33 MB

english, 2018

13

Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane

Sato, Motoyuki, Nakasaki, Yasushi, Watanabe, Koji, Aoyama, Tomonori, Hasegawa, Eiji, Koyama, Masato, Sekine, Katsuyuki, Eguchi, Kazuhiro, Saito, Masaki, Tsunashima, Yoshitaka

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 2.19 MB

english, 2008

14

Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4

Yasushi Nakasaki, Izumi Hirano, Koichi Kato, Yuichiro Mitani

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 563 KB

english, 2009

15

Self-aligned passivation on copper interconnection durability against oxidizing ambient annealing

Itow, Hitoshi, Nakasaki, Yasushi, Minamihaba, Gaku, Suguro, Kyoichi, Okano, Haruo

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 508 KB

english, 1993

16

Water Absorption Properties of Fluorine-Doped S i O 2 Films Using Plasma-Enhanced Chemical Vapor Deposition

Miyajima, Hideshi, Katsumata, Ryota, Nakasaki, Yasushi, Nishiyama, Yukio, Hayasaka, Nobuo

Journal:

Japanese Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 425 KB

english, 1996

17

[IEEE 2016 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2016.6.14-2016.6.16)] 2016 IEEE Symposium on VLSI Technology - First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property

Fujii, Shosuke, Kamimuta, Yuuichi, Ino, Tsunehiro, Nakasaki, Yasushi, Takaishi, Riichiro, Saitoh, Masumi

Year:

2016

Language:

english

File:

PDF, 1016 KB

english, 2016

18

Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen

Yasushi Nakasaki, Izumi Hirano, Koichi Kato, Yuuichiro Mitani

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 1.12 MB

english, 2011

19

Erratum to “Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen” [Microelectron. Eng. 88 (7) (2011) 1457–1460]

Yasushi Nakasaki, Izumi Hirano, Koichi Kato, Yuuichiro Mitani

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 111 KB

english, 2011

20

Laser Irradiation Effects on the Gas Permeability through Polymer Films

Wada, Kazuhiro, Uehara, Yasushi, Yamaguchi, Hiromi, Nakasaki, Yasushi, Ohmori, Fumio, Nishimura, Kenshi, Yamamoto, Masaki

Journal:

Japanese Journal of Applied Physics

Year:

1985

Language:

english

File:

PDF, 158 KB

english, 1985

21

Electromigration in a single crystalline submicron width aluminum interconnection

Shingubara, Shoso, Nakasaki, Yasushi, Kaneko, Hisashi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 627 KB

english, 1991

22

Interfacial energy calculation at interconnect-metal/barrier-metal interfaces for grain orientation control

Nakasaki, Yasushi, Minamihaba, Gaku, Suguro, Kyoichi, Itow, Hitoshi

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.25 MB

english, 1995

23

Ab initio Molecular Orbital Study of Water Absorption and Hydrolysis of Chemical Vapor Deposited SiOF Films I

Nakasaki, Yasushi, Miyajima, Hideshi, Katsumata, Ryota, Hayasaka, Nobuo

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 2.32 MB

1997

24

High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system

Yoda, Takashi, Fujita, Keiji, Miyajima, Hideshi, Nakata, Rempei, Nishiyama, Yukio, Nakasaki, Yasushi, Hayasaka, Nobuo

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 211 KB

english, 2004

25

[IEEE 2016 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2016.6.14-2016.6.16)] 2016 IEEE Symposium on VLSI Technology - Deep insight into process-induced pre-existing traps and PBTI stress-induced trap generations in high-k gate dielectrics through systematic RTN characterizations and ab initio calculations

Chen, Jiezhi, Nakasaki, Yasushi, Mitani, Yuichiro

Year:

2016

Language:

english

File:

PDF, 846 KB

english, 2016

26

[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Influence of pre-existing and generated traps on reliability in HfSiON/SiO2 stacks with fluorine incorporation

Izumi Hirano,, Takeshi Yamaguchi,, Yasushi Nakasaki,, Katsuyuki Sekine,, Yuichiro Mitani,

Year:

2008

Language:

english

File:

PDF, 481 KB

english, 2008

27

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - (Invited) A Study of Dielectric Breakdown Mechanisms in MG/HK MISFETs: From the Viewpoint of TDDB Statistics

Hirano, Izumi, Kato, Koichi, Nakasaki, Yasushi, Fukatsu, Shigeto, Sato, Motoyuki, Inumiya, Seiji, Goto, Masakazu, Sekine, Katsuyuki, Mitani, Yuichiro

Year:

2010

Language:

english

File:

PDF, 1.83 MB

english, 2010

28

[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation

Seki, Harumi, Nakasaki, Yasushi, Mitani, Yuichiro

Year:

2020

File:

PDF, 802 KB

2020

29

Atomic processes of NO oxynitridation on Si(100) surfaces

Kato, Koichi, Nakasaki, Yasushi, Uda, Tsuyoshi

Journal:

Physical Review B

Year:

2002

Language:

english

File:

PDF, 474 KB

english, 2002

30

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Novel TDDB mechanism for p-FET accelerated by hydrogen from HfSiON film

Hirano, Izumi, Kato, Koichi, Nakasaki, Yasushi, Fukatsu, Shigeto, Mitani, Yuichiro, Goto, Masakazu, Inumiya, Seiji, Sekine, Katsuyuki, Sato, Motoyuki

Year:

2010

Language:

english

File:

PDF, 453 KB

english, 2010

31

[IEEE 2016 IEEE International Reliability Physics Symposium (IRPS) - Pasadena, CA, USA (2016.4.17-2016.4.21)] 2016 IEEE International Reliability Physics Symposium (IRPS) - Dynamical observation of H-induced gate dielectric degradation through improved nuclear reaction analysis system

Higashi, Yusuke, Takaishi, Riichiro, Suzuki, Masamichi, Nakasaki, Yasushi, Tomita, Mitsuhiro, Mitani, Yuichiro, Matsumoto, Masuaki, Kato, Koichi, Ogura, Shohei, Fukutani, Katsuyuki

Year:

2016

Language:

english

File:

PDF, 1.46 MB

english, 2016

32

[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - Study on mechanism of thermal curing in ultra-thin gate dielectrics

Mitani, Yuichiro, Higashi, Yusuke, Nakasaki, Yasushi

Year:

2018

Language:

english

File:

PDF, 1.63 MB

english, 2018

33

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Impact of Very Low Hf Concentration (Hf=6%) Cap Layer on Performance and Reliability Improvement of HfSiON -CMOSFET with EOT Scalable to 1nm

Sato, Motoyuki, Nakasaki, Yasushi, Watanabe, Koji, Aoyama, Tomonori, Hasegawa, Eiji, Koyama, Masato, Sekine, Katsuyuki, Eguchi, Kazuhiro, Saito, Masaki, Tsunashima, Yoshitaka

Year:

2006

Language:

english

File:

PDF, 277 KB

english, 2006

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